8419.39.02/Silicon Ingot Drying Chamber/China

Silicon Ingot Drying Chamber from China

Climate-controlled chamber for drying silicon ingots after acid etch, using laminar flow heated air to remove moisture before slicing. HTS 8419.39.02 covers this industrial drying equipment for semiconductor material preparation.

Duty Rate — China → United States

35%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
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Import Tips

• Document acid etch chemistry removal efficiency

• Specify ingot dimensions supported (200-450mm diameter)

• Include cleanroom class certification (ISO 3-5)

Silicon Ingot Drying Chamber from China — Import Duty Rate | HTS 8419.39.02