Gallium Arsenide Wafer Cooler from Japan
Precision cooling station for GaAs wafers after high-temp epitaxy, using cryogenic or thermoelectric cooling to stabilize lattice structures. HTS 8419.39.0280 covers cooling processes in material treatment for semiconductors. Prevents thermal defects in compound semiconductor production.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Specify material (GaAs) and cooling method in entry docs for accurate duty
• Hazardous material declarations if using cryogens