Gallium Arsenide Wafer Cooler from China
Precision cooling station for GaAs wafers after high-temp epitaxy, using cryogenic or thermoelectric cooling to stabilize lattice structures. HTS 8419.39.0280 covers cooling processes in material treatment for semiconductors. Prevents thermal defects in compound semiconductor production.
Duty Rate — China → United States
35%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Specify material (GaAs) and cooling method in entry docs for accurate duty
• Hazardous material declarations if using cryogens