Epitaxial Reactor Vapor Dryer from Japan
Dryer integrated with MOCVD reactors to vaporize solvents from epitaxial GaN/SiC wafers using heated inert gas flows. Classifies under HTS 8419.39.0280 for vaporizing and drying in semiconductor layer deposition. Ensures contamination-free thin-film growth.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Link to epitaxy process in technical datasheets for classification support
• Cleanroom certification for import inspection
• Declare gas types to avoid hazmat issues