Epitaxial Reactor Vapor Dryer from China
Dryer integrated with MOCVD reactors to vaporize solvents from epitaxial GaN/SiC wafers using heated inert gas flows. Classifies under HTS 8419.39.0280 for vaporizing and drying in semiconductor layer deposition. Ensures contamination-free thin-film growth.
Duty Rate — China → United States
35%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Link to epitaxy process in technical datasheets for classification support
• Cleanroom certification for import inspection
• Declare gas types to avoid hazmat issues