Wafer Oxidation Furnace from Mexico
Nonelectric horizontal furnace growing thermal oxide layers on semiconductor wafers via steam or dry oxygen ambient at 900-1200°C. Fundamental for MOS gate dielectrics and isolation structures. Classified under 8417.80.00.00 as industrial processing furnace.
Duty Rate — Mexico → United States
13.9%
Rate breakdown
9903.05.5510%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.94, articles the product of Mexico, as provided for in U.S. note 52 to this subchapter
Import Tips
• Specify oxide thickness uniformity specs and LPCVD compatibility; document boat loading systems
• Common issue: classifying source gas cabinets separately as parts excluded from subheading