Wafer Oxidation Furnace from China
Nonelectric horizontal furnace growing thermal oxide layers on semiconductor wafers via steam or dry oxygen ambient at 900-1200°C. Fundamental for MOS gate dielectrics and isolation structures. Classified under 8417.80.00.00 as industrial processing furnace.
Duty Rate — China → United States
38.9%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Specify oxide thickness uniformity specs and LPCVD compatibility; document boat loading systems
• Common issue: classifying source gas cabinets separately as parts excluded from subheading