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Wafer Annealing Furnace from China

Industrial nonelectric furnace for high-temperature annealing of semiconductor wafers to relieve stresses and activate dopants after ion implantation. Uses rapid thermal processing in controlled atmospheres without electric resistance heating. Classified in 8417.80.00.00 for its role in semiconductor device fabrication processing.

Duty Rate — China → United States

38.9%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]

Import Tips

Provide process recipes showing semiconductor wafer compatibility and nonelectric heating method

Include cleanroom certification if applicable for duty preference claims

Common pitfall: incorrect classification as diffusion furnaces under 8486 if multifunctional