Silicon Carbide Sublimation Furnace from Japan
Nonelectric high-temperature furnace using physical vapor transport (PVT) method to grow silicon carbide boules for power electronics substrates. Operates above 2000°C in vacuum with graphite components. HTS 8417.80.00.00 covers specialized semiconductor crystal growth furnaces.
Duty Rate — Japan → United States
13.9%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Import Tips
• Certify PVT process and SiC boule specifications; include vacuum pump integration details
• High-value import requires detailed end-use statements for CBP review