Silicon Carbide Sublimation Furnace from Japan
Nonelectric high-temperature furnace using physical vapor transport (PVT) method to grow silicon carbide boules for power electronics substrates. Operates above 2000°C in vacuum with graphite components. HTS 8417.80.00.00 covers specialized semiconductor crystal growth furnaces.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Certify PVT process and SiC boule specifications; include vacuum pump integration details
• High-value import requires detailed end-use statements for CBP review