Silicon Carbide Sublimation Furnace from China
Nonelectric high-temperature furnace using physical vapor transport (PVT) method to grow silicon carbide boules for power electronics substrates. Operates above 2000°C in vacuum with graphite components. HTS 8417.80.00.00 covers specialized semiconductor crystal growth furnaces.
Duty Rate — China → United States
38.9%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Certify PVT process and SiC boule specifications; include vacuum pump integration details
• High-value import requires detailed end-use statements for CBP review