Crystal Ingot Anneal Furnace from Japan
Industrial nonelectric furnace for annealing semiconductor crystal ingots post-growth to minimize dislocation density and stabilize resistivity profiles. Slow ramp rates over 24+ hours in vertical configuration. HTS 8417.80.00.00 for semiconductor material processing furnaces.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Include dislocation density reduction specs and ingot diameter range; certify vertical lift mechanisms
• Avoid classification as general heat treatment if semiconductor-specific features absent