Crystal Ingot Anneal Furnace from China
Industrial nonelectric furnace for annealing semiconductor crystal ingots post-growth to minimize dislocation density and stabilize resistivity profiles. Slow ramp rates over 24+ hours in vertical configuration. HTS 8417.80.00.00 for semiconductor material processing furnaces.
Duty Rate — China → United States
41.4%
Rate breakdown
9903.05.3112.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of China, as provided for in U.S. note 52 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Include dislocation density reduction specs and ingot diameter range; certify vertical lift mechanisms
• Avoid classification as general heat treatment if semiconductor-specific features absent