Plasma Etch Vacuum Pump for Wafer Processing from China
High-vacuum pump part for plasma etching equipment in semiconductor wafer fabrication, supporting the processing of semiconductor materials into devices. Essential for maintaining process vacuum during reactive ion etching of wafer patterns. HTS 8414.90.91 covers such parts used in semiconductor device processing.
Duty Rate — China → United States
37.5%
Rate breakdown
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
9903.05.3112.5%Section 301 (forced labor) — additional 12.5% ad valorem on products of China
Import Tips
• Provide plasma etch chamber specifications showing semiconductor device processing function
• Document compatibility with fluorinated etch gases (SF6, CF4) required for classification
• Avoid general vacuum pump classification by including etch rate and wafer size specifications