Ion Implanter Vacuum Pump from China

Cryopump system designed for ion implanter chambers achieving UHV levels (<10^-9 Torr) for semiconductor dopant implantation. Classified 8414.80.90.00 as specialized vacuum pump for semiconductor device fabrication.

Duty Rate — China → United States

38.7%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)

Import Tips

Document ultimate vacuum specs and ion species compatibility

Include beam line pressure requirements in technical specs

Comply with radiation safety certifications for implanter use

Ion Implanter Vacuum Pump from China — Import Duty Rate | HTS 8414.80.90.00