Epitaxial Vacuum Pump Skid from Mexico

Integrated pump package (roughing + high vacuum) for MOCVD epitaxial reactors growing compound semiconductor layers (GaAs, InP). HTS 8414.80.90.00 for semiconductor epitaxy vacuum requirements.

Duty Rate — Mexico → United States

13.7%

Rate breakdown

9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter

Import Tips

Specify precursor compatibility (TMGa, TMAl) and growth pressures

Document hydride safety system integration

Include wafer size range (2-8 inch capability)