Epitaxial Vacuum Pump Skid from Japan
Integrated pump package (roughing + high vacuum) for MOCVD epitaxial reactors growing compound semiconductor layers (GaAs, InP). HTS 8414.80.90.00 for semiconductor epitaxy vacuum requirements.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Specify precursor compatibility (TMGa, TMAl) and growth pressures
• Document hydride safety system integration
• Include wafer size range (2-8 inch capability)