Epitaxial Vacuum Pump Skid from Japan
Integrated pump package (roughing + high vacuum) for MOCVD epitaxial reactors growing compound semiconductor layers (GaAs, InP). HTS 8414.80.90.00 for semiconductor epitaxy vacuum requirements.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Specify precursor compatibility (TMGa, TMAl) and growth pressures
• Document hydride safety system integration
• Include wafer size range (2-8 inch capability)