Epitaxial Vacuum Pump Skid from China
Integrated pump package (roughing + high vacuum) for MOCVD epitaxial reactors growing compound semiconductor layers (GaAs, InP). HTS 8414.80.90.00 for semiconductor epitaxy vacuum requirements.
Duty Rate — China → United States
41.2%
Rate breakdown
9903.05.3112.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of China, as provided for in U.S. note 52 to this subchapter
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
Import Tips
• Specify precursor compatibility (TMGa, TMAl) and growth pressures
• Document hydride safety system integration
• Include wafer size range (2-8 inch capability)