Float Zone Crystal Growth Turbine from Japan
Industrial gas turbine integrated into float zone equipment for producing high-purity monocrystalline semiconductor boules using zone melting techniques. Meets HTS 8411.81.80.10 criteria for semiconductor processing turbines under statistical note 1, with power ≤5,000 kW.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Import Tips
• Include float zone process specifications in entry docs; confirm turbine's dedicated semiconductor application; watch for reclassification if adaptable to non-semiconductor uses