Float Zone Crystal Growth Turbine from China
Industrial gas turbine integrated into float zone equipment for producing high-purity monocrystalline semiconductor boules using zone melting techniques. Meets HTS 8411.81.80.10 criteria for semiconductor processing turbines under statistical note 1, with power ≤5,000 kW.
Duty Rate — China → United States
37.5%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
Import Tips
• Include float zone process specifications in entry docs; confirm turbine's dedicated semiconductor application; watch for reclassification if adaptable to non-semiconductor uses