Silicon Ingot for Power Semiconductor Slicing from Mexico
Monocrystalline silicon ingot produced by Czochralski process, over 2.5 grams, for high-voltage power diode wafer production. Classified HTS 3824.99.1100 as cultured crystal ingot (non-optical) in Chapter 38 preparations. High-purity n/p-type doped silicon essential for IGBT and thyristor manufacturing.
Duty Rate — Mexico → United States
10%
Rate breakdown
9903.05.5510%Except for products described in headings 9903.05.85–9903.05.92 and 9903.05.94, articles the product of Mexico, as provided for in U.S. note 52 to this subchapter
Import Tips
• Document resistivity (e.g
• 1-10 ohm-cm) and crystal orientation (<100>/<111>) to confirm semiconductor-grade status
• Avoid Chapter 28 silicon classification by including CZ growth process certification