Silicon Ingot for Power Semiconductor Slicing from Japan
Monocrystalline silicon ingot produced by Czochralski process, over 2.5 grams, for high-voltage power diode wafer production. Classified HTS 3824.99.1100 as cultured crystal ingot (non-optical) in Chapter 38 preparations. High-purity n/p-type doped silicon essential for IGBT and thyristor manufacturing.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%
Import Tips
• Document resistivity (e.g
• 1-10 ohm-cm) and crystal orientation (<100>/<111>) to confirm semiconductor-grade status
• Avoid Chapter 28 silicon classification by including CZ growth process certification