Gallium Nitride Ingot for LED Substrate Manufacturing from Germany
Cultured gallium nitride (GaN) boule grown by hydride vapor phase epitaxy, exceeding 2.5 grams, in cylindrical ingot form for subsequent wafering. Falls under HTS 3824.99.1100 as non-optical cultured crystals used in optoelectronics substrates. GaN ingots enable blue LED and high-electron-mobility transistor production due to wide bandgap properties.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.05.3910%Section 301 (forced labor) — European Union member state (col1 rate < 10 percent): MFN < 10% → total duty capped at 10%
Import Tips
• Provide growth method documentation (HVPE/Czochralski) and defect density specs to distinguish from synthetic gemstones in Chapter 71
• Declare exact composition (GaN vs
• GaN-on-sapphire) as epi-ready affects classification; avoid bulk chemical headings