3818.00.00/Phosphorus-Doped N-Type Silicon Wafers/Japan

Phosphorus-Doped N-Type Silicon Wafers from Japan

High-purity silicon wafers doped with phosphorus for n-type conductivity, used in solar cells and CMOS manufacturing. The doping alters electrical properties specifically for electronic circuitry. HTS 3818.00.00 applies as doped chemical elements in wafer form.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Include resistivity and dopant density certificates; mismatches lead to CBP holds

• Package in nitrogen-sealed cleanroom bags to prevent contamination during transit