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Phosphorus-Doped N-Type Silicon Wafers from China

High-purity silicon wafers doped with phosphorus for n-type conductivity, used in solar cells and CMOS manufacturing. The doping alters electrical properties specifically for electronic circuitry. HTS 3818.00.00 applies as doped chemical elements in wafer form.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter

Import Tips

• Include resistivity and dopant density certificates; mismatches lead to CBP holds

• Package in nitrogen-sealed cleanroom bags to prevent contamination during transit

Phosphorus-Doped N-Type Silicon Wafers from China — Import Duty Rate | HTS 3818.00.00