Nitrogen-Doped Silicon Carbide Wafers from Japan
4H-SiC wafers doped with nitrogen for high-voltage power electronics and EV inverters. 150mm discs specifically engineered for electronic performance. Classified in 3818.00.00 as doped chemical compounds.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Certify defect density (micropipes/EPD); critical for duty verification
• Fragile—use double-boxed shock-resistant packaging