Nitrogen-Doped Silicon Carbide Wafers from China
4H-SiC wafers doped with nitrogen for high-voltage power electronics and EV inverters. 150mm discs specifically engineered for electronic performance. Classified in 3818.00.00 as doped chemical compounds.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Certify defect density (micropipes/EPD); critical for duty verification
• Fragile—use double-boxed shock-resistant packaging