Magnesium-Doped Gallium Nitride Wafers from China
GaN epi-wafers on sapphire with magnesium p-doping for blue LEDs and power HEMTs. Compound semiconductor wafers for optoelectronics. Doping for electronics places under 3818.00.00.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Declare substrate (sapphire/SiC) separately if detachable
• Temperature-controlled; GaN sensitive to thermal stress