Epitaxial Ready Nitrogen-Doped Silicon Carbide Wafers from Mexico
Epi-ready 4H-SiC n+ wafers nitrogen-doped for homoepitaxy in Schottky diodes and MOSFETs. Prepped surface for immediate epitaxial growth. Doped compound under 3818.00.00.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Epi-ready surface RMS <0.5nm; document metrology
• SiC thermal expansion mismatch—secure packaging