3818.00.00/Epitaxial Ready Nitrogen-Doped Silicon Carbide Wafers/Japan

Epitaxial Ready Nitrogen-Doped Silicon Carbide Wafers from Japan

Epi-ready 4H-SiC n+ wafers nitrogen-doped for homoepitaxy in Schottky diodes and MOSFETs. Prepped surface for immediate epitaxial growth. Doped compound under 3818.00.00.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Epi-ready surface RMS <0.5nm; document metrology

• SiC thermal expansion mismatch—secure packaging