Epitaxial Ready Nitrogen-Doped Silicon Carbide Wafers from China
Epi-ready 4H-SiC n+ wafers nitrogen-doped for homoepitaxy in Schottky diodes and MOSFETs. Prepped surface for immediate epitaxial growth. Doped compound under 3818.00.00.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Epi-ready surface RMS <0.5nm; document metrology
• SiC thermal expansion mismatch—secure packaging