Arsenic-Doped Indium Arsenide Wafers from China
InAs wafers doped for high-electron-mobility transistors in terahertz electronics. Compound semiconductor discs for advanced photonics. HTS 3818.00.00 applies.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• TSCA reporting for arsenic >0.1%; prepare accordingly
• InAs oxidation sensitive— inert atmosphere shipping
• Small volume research wafers higher value per unit