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3818.00.00/Arsenic-Doped Indium Arsenide Wafers/Canada

Arsenic-Doped Indium Arsenide Wafers from Canada

InAs wafers doped for high-electron-mobility transistors in terahertz electronics. Compound semiconductor discs for advanced photonics. HTS 3818.00.00 applies.

Duty Rate — Canada → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))
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Import Tips

• TSCA reporting for arsenic >0.1%; prepare accordingly

• InAs oxidation sensitive— inert atmosphere shipping

• Small volume research wafers higher value per unit

Arsenic-Doped Indium Arsenide Wafers from Canada — Import Duty Rate | HTS 3818.00.00