Phosphorus-Doped N-Type Silicon Wafers from China
Silicon wafers doped with phosphorus atoms to achieve n-type conductivity, critical for fabricating diodes, MOSFETs, and photovoltaic cells in electronics. The doping alters electrical properties for semiconductor applications. Falls under HTS 3818.00.00.95 as other doped chemical compounds for electronics.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Include resistivity measurements and dopant profile data to substantiate electronic use and prevent misclassification
• Comply with REACH and RoHS for trace impurities; use anti-static packaging to avoid damage during customs inspection