3818.00.00.95/P-Type Gallium Nitride Doped Wafers/Germany

P-Type Gallium Nitride Doped Wafers from Germany

GaN wafers with magnesium or other dopants for p-type conductivity in blue LEDs, lasers, and RF devices. Enables high-efficiency optoelectronics and 5G components. Under HTS 3818.00.00.95 for other doped electronic wafers.

Duty Rate — Germany → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Hole mobility and activation energy data required; UV-protective packaging essential

• Declare substrate (sapphire/Si) separately if detachable

P-Type Gallium Nitride Doped Wafers from Germany — Import Duty Rate | HTS 3818.00.00.95