3818.00.00.95/P-Type Gallium Nitride Doped Wafers/China

P-Type Gallium Nitride Doped Wafers from China

GaN wafers with magnesium or other dopants for p-type conductivity in blue LEDs, lasers, and RF devices. Enables high-efficiency optoelectronics and 5G components. Under HTS 3818.00.00.95 for other doped electronic wafers.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Hole mobility and activation energy data required; UV-protective packaging essential

• Declare substrate (sapphire/Si) separately if detachable

P-Type Gallium Nitride Doped Wafers from China — Import Duty Rate | HTS 3818.00.00.95