P-Type Gallium Nitride Doped Wafers from China
GaN wafers with magnesium or other dopants for p-type conductivity in blue LEDs, lasers, and RF devices. Enables high-efficiency optoelectronics and 5G components. Under HTS 3818.00.00.95 for other doped electronic wafers.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Hole mobility and activation energy data required; UV-protective packaging essential
• Declare substrate (sapphire/Si) separately if detachable