Epitaxial Boron-Doped Silicon Wafers from Japan
Silicon wafers with an epitaxial layer doped with boron for advanced CMOS manufacturing and MEMS devices. The epitaxial growth ensures precise thickness control for high-performance electronics. Fits HTS 3818.00.00.95 as other doped wafers for electronics.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide epi-layer specs including thickness, resistivity, and defect maps for customs valuation
• Comply with ITAR if dual-use potential; cleanroom certification speeds clearance