Arsenic-Doped Gallium Arsenide Wafers from Japan
Gallium arsenide substrates doped with arsenic or related impurities for high-frequency electronics like RF amplifiers and LEDs. These compound semiconductors offer superior electron mobility for optoelectronics. Covered by HTS 3818.00.00.95 for other doped chemicals in wafer form.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Submit epitaxial growth specs and toxicity assessments due to arsenic content; EPA compliance often required
• Declare wafer orientation (e.g
• Ga-face) and defect density; fragile handling needed to prevent breakage claims