3818.00.00.95/Arsenic-Doped Gallium Arsenide Wafers/Germany

Arsenic-Doped Gallium Arsenide Wafers from Germany

Gallium arsenide substrates doped with arsenic or related impurities for high-frequency electronics like RF amplifiers and LEDs. These compound semiconductors offer superior electron mobility for optoelectronics. Covered by HTS 3818.00.00.95 for other doped chemicals in wafer form.

Duty Rate — Germany → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Submit epitaxial growth specs and toxicity assessments due to arsenic content; EPA compliance often required

• Declare wafer orientation (e.g

• Ga-face) and defect density; fragile handling needed to prevent breakage claims

Arsenic-Doped Gallium Arsenide Wafers from Germany — Import Duty Rate | HTS 3818.00.00.95