Undoped GaAs Wafer with Epitaxial Doping Layer from Japan
Semi-insulating undoped GaAs substrate wafer with a thin epitaxial doped layer grown on surface for MMIC production. The doping is integral for electronic functionality in monolithic microwave ICs. Still classified under HTS 3818.00.0010 as doped GaAs wafers.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Submit MBE/MOCVD process documentation proving epitaxial doping integration
• Label as 'doped for electronics' clearly to avoid downgrade to undoped material
• Anticipate higher scrutiny for dual-use tech; prepare end-user statements