3818.00.00.10/Epi-Ready Doped GaAs Wafer 100mm/Japan

Epi-Ready Doped GaAs Wafer 100mm from Japan

100mm epi-ready GaAs wafer doped with controlled carrier concentration for immediate MBE growth. Used in gallium nitride overgrowth for power electronics. Falls under HTS 3818.00.0010 as doped disc-form electronics material.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Atomic force microscopy (AFM) surface roughness data (<0.2nm RMS) essential

• Specify substrate miscut angle (e.g

• 15° off (111)B) accurately

• Register with CBP for repeated imports to streamline processing