8-Inch Doped GaAs Wafer for Photonics from Japan
Large 8-inch GaAs wafer doped for photonic integrated circuits, enabling high-speed data transmission in telecom. Features low dislocation density for VCSEL array fabrication. Covered by HTS 3818.00.0010 for doped semiconductor wafers.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide laser diode compatibility certification for proper valuation
• Declare wafer bow/warp specs (<10 microns) to confirm quality grade
• Avoid bulk packaging; use individual cassettes for customs inspection