3818.00.00.10/8-Inch Doped GaAs Wafer for Photonics/Japan

8-Inch Doped GaAs Wafer for Photonics from Japan

Large 8-inch GaAs wafer doped for photonic integrated circuits, enabling high-speed data transmission in telecom. Features low dislocation density for VCSEL array fabrication. Covered by HTS 3818.00.0010 for doped semiconductor wafers.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Provide laser diode compatibility certification for proper valuation

• Declare wafer bow/warp specs (<10 microns) to confirm quality grade

• Avoid bulk packaging; use individual cassettes for customs inspection

8-Inch Doped GaAs Wafer for Photonics from Japan — Import Duty Rate | HTS 3818.00.00.10