3818.00.00.10/4-Inch N-Type Doped GaAs Wafer/China

4-Inch N-Type Doped GaAs Wafer from China

A 4-inch GaAs wafer doped n-type with silicon impurities, designed for epitaxial growth in high-electron-mobility transistors (HEMTs). Used in satellite communications and 5G base stations due to superior electron mobility. Falls under HTS 3818.00.0010 for doped gallium arsenide wafers in disc form for electronics.

Duty Rate — China → United States

50%

Rate breakdown

9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

Calculate with your customs value Verify classification with AI

Import Tips

• Provide epitaxial readiness certification to distinguish from basic doped wafers and prevent misclassification

• Comply with ITAR/EAR export controls if destined for defense-related electronics applications

• Declare exact thickness (e.g

• 350-625 microns) and orientation (e.g

• (100) plane) in entry docs