3818.00.00.10/3-Inch High-Mobility Electron GaAs Wafer/Japan

3-Inch High-Mobility Electron GaAs Wafer from Japan

3-inch diameter GaAs wafer doped for high electron mobility, used in pseudomorphic HEMT structures for low-noise amplifiers. Polished on both sides with specific epi-ready surface finish. HTS 3818.00.0010 applies to these doped electronic wafers.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Include Hall effect mobility data (>8000 cm²/Vs) in technical specs for classification support

• Ensure arsenic vapor containment in shipping to meet DOT hazardous material regs