3-Inch High-Mobility Electron GaAs Wafer from China
3-inch diameter GaAs wafer doped for high electron mobility, used in pseudomorphic HEMT structures for low-noise amplifiers. Polished on both sides with specific epi-ready surface finish. HTS 3818.00.0010 applies to these doped electronic wafers.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Include Hall effect mobility data (>8000 cm²/Vs) in technical specs for classification support
• Ensure arsenic vapor containment in shipping to meet DOT hazardous material regs