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3818.00.00.10/2-Inch Doped Gallium Arsenide Wafer/Mexico

2-Inch Doped Gallium Arsenide Wafer from Mexico

A 2-inch diameter silicon wafer made from gallium arsenide (GaAs), doped with impurities like silicon or tellurium to enhance electrical conductivity for semiconductor applications. These wafers are polished to atomic-level flatness and used primarily in high-frequency electronics such as RF amplifiers and microwave devices. Classified under HTS 3818.00.0010 as chemical compounds doped for use in electronics in wafer form.

Duty Rate — Mexico → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Verify doping specifications and purity levels (e.g

• n-type or p-type) in documentation to confirm classification under 3818.00.0010

• Include certificates of analysis from manufacturer detailing GaAs composition and dopant concentration to avoid reclassification

• Ensure proper ESD-safe packaging and labeling as hazardous materials if applicable due to arsenic content

2-Inch Doped Gallium Arsenide Wafer from Mexico — Import Duty Rate | HTS 3818.00.00.10