2-Inch Doped Gallium Arsenide Wafer from Japan
A 2-inch diameter silicon wafer made from gallium arsenide (GaAs), doped with impurities like silicon or tellurium to enhance electrical conductivity for semiconductor applications. These wafers are polished to atomic-level flatness and used primarily in high-frequency electronics such as RF amplifiers and microwave devices. Classified under HTS 3818.00.0010 as chemical compounds doped for use in electronics in wafer form.
Duty Rate — Japan → United States
Rate breakdown
Import Tips
• Verify doping specifications and purity levels (e.g
• n-type or p-type) in documentation to confirm classification under 3818.00.0010
• Include certificates of analysis from manufacturer detailing GaAs composition and dopant concentration to avoid reclassification
• Ensure proper ESD-safe packaging and labeling as hazardous materials if applicable due to arsenic content