HFC-23 Semiconductor Etch Gas from Japan
Ultra-high purity trifluoromethane (HFC-23) used in plasma etching processes for semiconductor manufacturing, particularly for tungsten and oxide etch applications. Classified in HTS 2903.41.10.00 as a separate chemically defined fluorinated hydrocarbon meeting Chapter 29 heading requirements.
Duty Rate — Japan → United States
12.5%
Rate breakdown
9903.05.4912.5%Except for products described in headings 9903.05.85–9903.05.92, articles the product of Japan, with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 12.5 percent, as provided for in U.S. note 52 to this subchapter
Import Tips
• Require SEMI-standard purity certificates (99.999%+) and confirm no moisture/particulates per semiconductor gas specs
• DOT UN1048 labeling required; ensure compatibility with stainless steel or aluminum cylinders
• Avoid industrial-use misclassification to 3824; pure HFC-23 remains Chapter 29 regardless of end-use