2903.41.10.00/HFC-23 Semiconductor Etch Gas/Japan

HFC-23 Semiconductor Etch Gas from Japan

Ultra-high purity trifluoromethane (HFC-23) used in plasma etching processes for semiconductor manufacturing, particularly for tungsten and oxide etch applications. Classified in HTS 2903.41.10.00 as a separate chemically defined fluorinated hydrocarbon meeting Chapter 29 heading requirements.

Duty Rate — Japan → United States

12.5%

Rate breakdown

9903.05.4912.5%Section 301 (forced labor) — Japan (col1 rate < 12.5 percent): MFN < 12.5% → total duty capped at 12.5%

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Import Tips

• Require SEMI-standard purity certificates (99.999%+) and confirm no moisture/particulates per semiconductor gas specs

• DOT UN1048 labeling required; ensure compatibility with stainless steel or aluminum cylinders

• Avoid industrial-use misclassification to 3824; pure HFC-23 remains Chapter 29 regardless of end-use