Undoped Gallium Arsenide Wafer 150mm for Optoelectronics from Japan
150mm undoped GaAs wafer optimized for optoelectronic device fabrication such as laser diodes. Classified in HTS 2853.90.90.10 as undoped wafers under other inorganic compounds including phosphides. High purity essential for light-emitting applications.
Duty Rate — Japan → United States
2.8%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Supply FTIR or Hall effect test reports confirming no dopants for 2853 classification
• Use HTSUS advisory rulings for large wafers to preempt CBP challenges on value or origin
• Package in nitrogen-purged cassettes to maintain purity during ocean freight