2853.90.90.10/Undoped GaAs Wafer 100mm Thick Film Substrate/Japan

Undoped GaAs Wafer 100mm Thick Film Substrate from Japan

100mm undoped gallium arsenide wafer designed as a substrate for thick-film deposition in hybrid circuits. Falls under HTS 2853.90.90.10 for undoped GaAs wafers as inorganic phosphide compounds. Used in microwave and power electronics.

Duty Rate — Japan → United States

2.8%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter

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Import Tips

• Document crystal orientation (e.g

• (100) or (111)) and flatness specs (<1 micron) for accurate tariff classification

• Check BIS export licensing for GaAs wafers over certain sizes due to technology controls