Undoped GaAs Wafer 100mm Thick Film Substrate from China
100mm undoped gallium arsenide wafer designed as a substrate for thick-film deposition in hybrid circuits. Falls under HTS 2853.90.90.10 for undoped GaAs wafers as inorganic phosphide compounds. Used in microwave and power electronics.
Duty Rate — China → United States
27.8%
Rate breakdown
9903.88.0325%Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Document crystal orientation (e.g
• (100) or (111)) and flatness specs (<1 micron) for accurate tariff classification
• Check BIS export licensing for GaAs wafers over certain sizes due to technology controls